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PD - 95275 SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l l IRF7467PBF HEXFET(R) Power MOSFET VDSS 30V RDS(on) max 12m ID 11A High Frequency Buck Converters for Computer Processor Power Lead-Free S S S G 1 8 7 l Benefits Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current A A D D D D 2 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. 30 12 11 9.0 90 2.5 1.6 0.02 -55 to + 150 Units V V A W W W/C C Thermal Resistance Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. --- --- Max. 20 50 Units C/W Notes through are on page 8 www.irf.com 1 09/21/04 IRF7467PBF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- Static Drain-to-Source On-Resistance --- --- Gate Threshold Voltage 0.6 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.029 9.4 10.6 17 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 12 VGS = 10V, ID = 11A 13.5 m VGS = 4.5V, ID = 9.0A 35 VGS = 2.8V, ID = 5.5A 2.0 V VDS = VGS, ID = 250A 20 VDS = 16V, VGS = 0V A 100 VDS = 16V, VGS = 0V, TJ = 125C 200 VGS = 12V nA -200 VGS = -12V Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 28 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 21 6.7 5.8 21 7.8 2.5 19 4.0 2530 706 46 Max. Units Conditions --- S VDS = 16V, ID = 9.0A 32 ID = 9.0A 10 nC VDS = 15V 8.7 VGS = 4.5V 29 VGS = 0V, VDS = 15V --- VDD = 15V, --- ID = 9.0A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 15V --- pF = 1.0MHz Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy Avalanche Current Typ. --- --- Max. 223 11 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units --- --- --- --- 2.3 A 90 1.3 --- 60 84 65 96 V ns nC ns nC VSD trr Qrr trr Qrr --- 0.79 --- 0.65 --- 40 --- 56 --- 43 --- 64 Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 9.0A, VGS = 0V TJ = 125C, IS = 9.0A, VGS = 0V TJ = 25C, IF = 9.0A, V R= 15V di/dt = 100A/s TJ = 125C, IF = 9.0A, VR=15V di/dt = 100A/s 2 www.irf.com IRF7467PBF 1000 VGS 15.0V 10.0V 4.50V 3.00V 2.70V 2.50V 2.25V BOTTOM 2.00V TOP 1000 VGS 15.0V 10.0V 4.50V 3.00V 2.70V 2.50V 2.25V BOTTOM 2.00V TOP 100 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 10 10 2.0V 1 1 2.0V 20s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 20s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 I D , Drain-to-Source Current (A) TJ = 150 C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 11A 1.5 10 TJ = 25 C 1.0 1 0.5 0.1 2.0 V DS = 15V 20s PULSE WIDTH 2.4 2.8 3.2 3.6 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7467PBF 4000 3200 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = 9.0A VDS = 24V VDS = 15V 8 C, Capacitance (pF) Ciss 2400 6 1600 4 Coss 800 2 Crss 0 1 10 100 0 0 8 16 24 32 40 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C 10 ID , Drain Current (A) 100 10us 100us 10 1ms TJ = 25 C 1 0.1 0.3 V GS = 0 V 0.6 0.9 1.2 1.5 1.8 2.1 1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7467PBF 12 VDS V GS RG 10V RD 10 D.U.T. + I D , Drain Current (A) - VDD 8 Pulse Width 1 s Duty Factor 0.1 % 6 4 Fig 10a. Switching Time Test Circuit VDS 90% 2 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7467PBF RDS ( on ) , Drain-to-Source On Resistance ( ) RDS(on) , Drain-to -Source On Resistance () 0.020 0.019 0.018 0.017 0.016 0.015 0.014 0.013 0.012 0.011 0.010 0 20 40 60 80 100 ID , Drain Current ( A ) VGS = 10V VGS = 4.5V 0.020 0.018 0.016 0.014 ID = 11A 0.012 0.010 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50K 12V .2F .3F VGS QGS D.U.T. + V - DS QG QGD VG EAS , Single Pulse Avalanche Energy (mJ) 600 VGS 3mA TOP 500 Charge IG ID BOTTOM ID 4.0A 7.2A 9.0A Current Sampling Resistors 400 Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 300 200 15V V(BR)DSS tp VDS L 100 DRIVER RG 20V D.U.T IAS + V - DD 0 A 25 50 75 100 125 150 I AS tp 0.01 Starting TJ , Junction Temperature ( C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7467PBF SO-8 Package Outline Dimensions are shown in millimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 8 6 E 1 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.635 B ASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45 8X L 7 8X c NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] F OOTPRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 www.irf.com 7 IRF7467PBF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec Starting TJ = 25C, L = 5.5mH RG = 25, IAS = 9.0A. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04 8 www.irf.com |
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